 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 30 kHz - 26.5 GHz Power Amplifier Description The IT2005 is a broadband GaAs MMIC traveling wave amplifier designed for medium output power applications where low-frequency extension capabilities are also required. The IT2005 provides a saturated output power of 0.5 W up to 8 GHz, greater than 25 dBm up to 16 GHz, and greater than 20 dBm at 26.5 GHz. Average gain is 16 dB. DC power consumption is as low as 1.76 W. Input and output ports are DC coupled. Frequency range: 2 GHz - 26.5 GHz with lowfrequency extension capability down to 30 KHz Psat (2 GHz - 8 GHz): 27 dBm Psat (8 GHz - 16 GHz): 25 dBm Psat at 26.5 GHz: >20 dBm Average gain: 16 dB DC power consumption: 1.76 W DC bias conditions: 8 V at 220 mA Full chip passivation for high reliability VGG2 VDD IT2005 Features IN OUT www..com VGG1 Absolute Maximum Ratings Symbol VDD VGG1 IDQ IGG1 Pin Pdiss_DC Tch Tm Tst Parameters/conditions Positive supply voltage Negative supply voltage Positive supply current Negative supply current RF input power DC power dissipation (no RF) Operating channel temperature Mounting temperature (30 s) Storage temperature Min. -2 Max. 10 0 600 1.8 23 4 150 320 150 Units V V mA mA dBm W C C C -65 Recommended Operating Conditions Symbol Parameters/conditions Tb VDD VGG1 IDQ Operating temperature range (back side) Positive bias supply Negative bias supply DC supply drain current Min. -40 8 -0.4 -0.6 220 Typ. Max. 85 9 -0.9 260 Units o C V V mA For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 1 30 kHz - 26.5 GHz Power Amplifier Electrical Characteristics (at 25 C) 50-ohm system VDD = +8 V Quiescent current (IDQ) = 220 mA VGG2 = +3.4 V www..com extension available. *Low frequency IT2005 Symbol BW S21 S11 S22 S12 Psat P1dB Parameters/conditions Frequency range* Small signal gain Input return loss Output return loss Isolation Saturated output power (3 dB gain compression) 2 - 10GHz 2- 20 GHz 2 - 26.5 GHz Output power (1 dB gain compression) 2 - 10 GHz 2 - 20 GHz 2 - 26.5 GHz Min. 2 10 12 12 30 24 21.5 19 23 20 18 Typ. 16 15 15 Max. 26.5 Units GHz dB dB dB dB dBm dBm dBm dBm dBm dBm 26 23.5 21 25 22 20 Thermal Characteristics Symbol Parameters/conditions Rth_jb ( C/W) Tch ( C) Rth_jb Thermal resistance junction-back side of die 18.5 99.0 No RF: DC bias VDD = 8 V, IDQ = 220mA , PDC = 1.76 W Tbase = 70 C Rth_jb Thermal resistance junction-back side of die RF applied: Saturated power 0.5W, VDD = 8 V, Pdiss = 2.15 W 18.5 113.0 Tbase = 70 C o o MTTF (h) >> +1E7 >> +1E7 Chip Layout and Bond Pad Locations Pinout and pad dimensions: P1: RF input (100 x 150 m2) P2: VGG1, negative voltage (200 x 100 m2) P3: RF output and Vdd bias (option 2) by means of biastee (100 x 150 m2) P4: VDD positive voltage (option 1) by means of choke (100 x 130 m2) P5: Drain low-frequency extension (150 x 100 m2) P6: VGG2, second gate voltage (100 x 100 m2) Note: All dimensions are in millimeters Chip size tolerance: 20 m Chip thickness: 4 mil with tolerance of 0.4 mil Back of chip is RF and DC ground P5 P4 P3 P6 P1 P2 For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 2 30 kHz - 26.5 GHz Power Amplifier Recommended Assembly Diagram for 2 to 26.5 GHz Applications 1. For applications at 2 GHz and above, an inductor of Lc> = 3 nH www..com >3 (1 mil long bond wire mm) is necessary to provide drain bias. 2. Bypass capacitor must be large enough to isolate bias supply (> = 10 F) IT2005 VDD (option 1) 100 uF VGG2 RF output and VDD (option 2) thru bias tee RF In VGG1 For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 3 30 kHz - 26.5 GHz Power Amplifier Recommended Assembly Diagram for 30 kHz to 26.5 GHz Applications Appropriate lowfrequency choke must www..comKHz be applied for 30 application. IT2005 VDD (option1) (1) VGG2 RF output and VDD (option 2) thru bias tee RF input VGG1 For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 4 30 kHz - 26.5 GHz Power Amplifier Performance Data T = 25 C S21 (dB) IT2005 Small Signal Gain, VDD=8V, IDQ=220mA 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 10.0 5.0 0.0 -5.0 -10.0 Input Return loss, VDD=8V, IDQ=220mA S11 (dB) -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 www..com Freq. (GHz) Freq. (GHz) Output Return loss, VDD=8V, IDQ=220mA 10.0 5.0 0.0 -5.0 -10.0 Gain vs. Drain Bias VDD, IDQ=220mA 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 0 2 4 S22 (dB) -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 S21 (dB) 9V, 220mA 8V, 220mA 6 8 10 12 14 16 18 20 22 24 26 Freq. (GHz) Freq. (GHz) Gain vs. Temperature, VDD =8V 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 2.0 4.0 Saturated Power, VDD=8V, IDQ=220mA 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Tbase=0C Tbase=25C Tbase=50C Tbase=70C Tbase=85C 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 P1dB(dBm) S21 (dB) Freq. (GHz) Freq. (GHz) For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 5 30 kHz - 26.5 GHz Power Amplifier Performance Data T = 25 C P1dB(dBm) IT2005 P1dB, VDD=8V, IDQ=220mA 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 0 2 4 6 8 10 12 14 16 18 20 22 24 26 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 0 2 4 P1dB vs. VDD, IDQ=220 mA VDD=9V P1dB(dBm) VDD=8V www..com 6 8 10 12 14 16 18 20 22 24 26 Freq. (GHz) Freq. (GHz) 50 45 40 Output Third Order Intercept Point, VDD=8V, IDQ=220mA OIP3(dBm) 35 30 25 20 15 10 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Freq. (GHz) For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 6 30 kHz - 26.5 GHz Power Amplifier Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VGG1) WHILE CORRESPONDING DRAIN VOLTAGE (VDD) IS PRESENT CAN DAMAGE THE AMPLIFIER. IT2005 The following procedure must be considered to properly test the amplifier. The IT2005 amplifier is biased with a positive drain supply (VDD) and one negative gate supply (VGG1). The recommended bias conditions for the IT2005 is VDD= 8.0V, IDQ = 220mA. To achieve this drain current level, VGG1 is typically biased between -0.5 V and -0.9 V. The gate voltage (VGG1) MUST be applied prior to the drain voltage (VDD) during power up and removed after the drain voltage is removed during the power down. Drain bias VDD can be applied to the drain pad (pad 4), or the positive power supply can be applied through an external bias tee to the RF output pad. For the second gate VGG2, a voltage of about 3.4 V is required (VDD = 8 V, VGG1 = -0.6 V). In general, VGG2=VDD/2 - |VG1|. For example, when VDD = 8 V and VGG1 = -0.6, the voltage recommended is: VGG2 =(8V/2)-0.6V=3.4V. VGG2 should be biased before or at the same time as VDD. www..com Low Frequency Operation External coupling capacitors are needed at the RF_IN (P1) and RF_OUT (P3) ports. Two options are allowed to provide the positive drain voltage VDD. Option 1 uses an on-chip pad (P4) with an appropriate value of inductance (choke) used to maintain good matching over the operating bandwidth, as reported in the assembly diagram. Option 2 uses an external bias-tee directly from the pad at the RF output. For application as low as 30 KHz, a large value of inductance must be used in parallel with appropriate resistors in order to optimize gain flatness. Application CAUTION: THIS IS AN ESD-SENSITIVE DEVICE Information Chip carrier material should be selected to have a GaAs-compatible thermal coefficient of expansion and high thermal conductivity, such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325 C for 15 min. Die attachment for power devices should utilize gold/tin (80/20) eutectic alloy solder and should avoid a hydrogen environment for PHEMT devices. Note that the back side of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in a dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD-sensitive devices and should be handled with care, including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3-mil-wide and 0.5-mil-thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mil long corresponding to a typical 2 mil gap between the chip and the substrate material. For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 7 |
Price & Availability of IT2005
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |